The devices with additional gates like Fin Field effect transistor (FinFET) provide Higher control on subthreshold parameters and are favorable for Ultra large-scale integration. Also, these structures provide High control on current through the channel and with minimum leakage. In this paper we designed a FinFET with High-K gate Dielectric material i. e Hafnium oxide as gate oxide. A comparison of similar sized transistor with Air and Silicon dioxide as gate material is performed. The comparison is mainly in terms of performance parameters like transconductance, subthreshold slope, and drain current characteristics. There is an increase in ON current on using a High-K Dielectric material and subsequently an improvement in other parameters like subthreshold slope, transconductance and intrinsic gain.

This work investigates the channel thickness dependency of High-k gate Dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of High-k Dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a High noise margin as well as gain. It is also found that delay performance of the inverter circuit also gets upgraded slightly by using High-k gate Dielectric materials. Further, it is observed that the scaling down of channel thickness (TSi) improves the noise margin (NM), and gain (A) at the cost of propagation delay (Pd). Moreover, it is also observed that the changes in noise margin (Δ, NM = NM(K=40) –,NM(K=3. 9)), propagation delay (Δ, Pd = Pd (K=40) –,Pd (K=3. 9)), and gain (Δ, A = A(K=40) –,A(K=3. 9)) gets hinder at lower TSi. Therefore, it is apposite to look at lower channel thickness (~6 nm) while designing High-k gate Dielectric-based DG-MOSFET for CMOS inverter cell.

Recently, photonic crystals doped with liquid crystal (LC) material havegained much research interest. In this article new ternary one-dimensional photoniccrystal introduced and studied. The liquid crystal layer of 5CB and 5PCH is sandwichedby two Dielectric layers. For the first time, we use four structures SiO2/UCF35/CaF2, SiO2/5CB/CaF2, NFK51/UCF35/NPSK53 and NFK51/5CB/NPSK53. The effect oftemperature on transfer band gap of these photonic crystals is investigated withtransferred matrix method. The results show that in all four structures PBG forextraordinary ray (ne) is very large than ordinary ray (no) and with increasing oftemperature, PBG shifts to red wavelength. PBG width is very vast and variation of thefigure with respect temperature is very sharp for SiO2/UCF35/CaF2 structure. Also, thesuggested design takes High tunability due to the infiltration of the LC material. One canuse the proposed structure as temperature sensing device, narrow band optical filter andin many optical systems.

Recently, photonic crystals doped with liquid crystal (LC) material have gained much research interest. In this article new ternary one-dimensional photonic crystal introduced and studied. The liquid crystal layer of 5CB and 5PCH is sandwiched by two Dielectric layers. For the first time, we use four structures SiO2/UCF35/CaF2, SiO2/5CB/CaF2, NFK51/UCF35/NPSK53 and NFK51/5CB/NPSK53. The effect of temperature on transfer band gap of these photonic crystals is investigated with transferred matrix method. The results show that in all four structures PBG for extraordinary ray (ne) is very large than ordinary ray (no) and with increasing of temperature, PBG shifts to red wavelength. PBG width is very vast and variation of the figure with respect temperature is very sharp for SiO2/UCF35/CaF2 structure. Also, the suggested design takes High tunability due to the infiltration of the LC material. One can use the proposed structure as temperature sensing device, narrow band optical filter and in many optical systems.